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| Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 45mJ q High-speed switching: tf = 30ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.00.5 3.20.1 13.70.2 4.20.2 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 250 20 7 14 45 35 2 150 -55 to +150 Unit V V A A mJ W C C 0.550.15 1 2 2.540.3 3 5.080.5 1: Gate 2: Drain 3: Source TO-220D Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C L = 0.1mH, IL = 8A, VDD = 50V, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VGS = 10V, ID = 5A VDD = 100V, RL = 20 Conditions VDS = 200V, VGS = 0 VGS = 20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 5A VDS = 10V, ID = 5A IDR = 8A, VGS = 0 1100 VDS = 10V, VGS = 0, f = 1MHz 200 60 20 20 130 30 2.7 250 1 0.4 4.7 -1.7 5 0.6 min typ max 0.1 1 Unit mA A V V S V pF pF pF ns ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time 1 Power F-MOS FETs Area of safe operation (ASO) 100 60 2SK3042 PD Ta 16 (1) TC=Ta (2) Without heat sink 50 TC=25C 14 12 10 7.5V 8 7V 6 6.5V 4 6V 40W 2 (2) 0 0 0 20 40 60 80 100 120 140 160 0 5 10 15 20 5.5V 5V VGS=15V 10V ID VDS 30 10 3 1 0.3 0.1 0.03 0.01 1 3 10 DC 100s 1ms 10ms t =10s Allowable power dissipation PD (W) Non repetitive pulse TC=25C Drain current ID (A) 40 30 (1) 20 100ms 10 30 100 300 1000 Drain to source voltage VDS (V) Ambient temperature Ta (C) Drain current ID (A) Drain to source voltage VDS (V) ID VGS 10 VDS=10V TC=0C 25C 75C 6.6 125C 150C 6.4 6.2 6.0 5.8 5.6 5.4 5.2 5.0 0 2 4 6 8 10 12 0 25 VGS TC VDS=10V ID=3A 6 Vth TC VDS=25V ID=1mA 5 Gate to source voltage VGS (V) 8 Gate threshold voltage Vth (V) 50 75 100 125 150 Drain current ID (A) 4 6 3 4 2 2 1 0 0 0 25 50 75 100 125 150 Gate to source voltage VGS (V) Case temperature TC (C) Case temperature TC (C) RDS(on) ID Drain to source ON-resistance RDS(on) () 0.6 8 | Yfs | ID Forward transfer admittance |Yfs| (S) TC=25C VDS=10V TC=25C Ciss, Coss, Crss VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 f=1MHz TC=25C Ciss 7 6 5 4 3 2 1 0 3000 1000 300 100 30 10 3 1 0 40 80 120 0.5 0.4 VGS=10V 15V 0.3 Coss Crss 0.2 0.1 0 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 160 200 Drain current ID (A) Drain current ID (A) Drain to source voltage VDS (V) 2 Power F-MOS FETs Rth(t) t 102 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) 2SK3042 Thermal resistance Rth(t) (C/W) 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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